| 发明名称 |
OXIDE ION CONDUCTIVE MATERIAL COMPRISING BISMUTH-ERBIUM-TUNGSTEN OXIDE SOLID SOLUTION AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide ion conductive material stable without decomposing or phase transition even in a low temperature zone and exhibiting high oxide ion conduction. <P>SOLUTION: The oxide ion conductive material comprises a bismuth-erbium-tungsten oxide solid solution having a face-centered cubic crystal system structure and expressed by a general formula, (Bi<SB>2</SB>O<SB>3</SB>)<SB>x</SB>(Er<SB>2</SB>O<SB>3</SB>)<SB>y</SB>(WO<SB>3</SB>)<SB>z</SB>(0.695<x<0.745, 0.20<y<0.255 and 0.035<z<0.065, where x+y+z=1). The oxide ion conductive material is stable without decomposing or phase transition even in a low temperature ranging from ≤600°C to ≥500°C and exhibits the high oxide ion conduction of ≥10<SP>-2</SP>S cm<SP>-1</SP>. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006151716(A) |
申请公布日期 |
2006.06.15 |
| 申请号 |
JP20040341998 |
申请日期 |
2004.11.26 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
WATANABE AKITERU;SEKIDA MASAMI |
| 分类号 |
C04B35/00;C01G41/00;H01B1/08;H01B13/00;H01M8/02;H01M8/12 |
主分类号 |
C04B35/00 |
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