| 摘要 |
1,155,978. Semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 11 Oct., 1966 [28 Oct., 1965; 4 Nov., 1965; 8 Sept., 1966 (2)], No. 45344/66. Heading H1K. A pressure-responsive semi-conductor switching device comprises a body 1 of one conductivity type, first and second regions 2, 3 of the other type on opposite sides of the body, a third region 4 of the one type provided in a portion of at least one of the first and second regions, a fourth region 6 containing a deep energy level impurity formed in another portion of one of the first and second regions, and a heavily doped fifth region 5 of the other conductivity type formed in the fourth region. The device is triggered by applying pressure to the region 5, thereby causing avalanche breakdown at the junction between the regions 5 and 2 where th deep energy level impurity is present. The device may be made by diffusing phosphorus into a P-type silicon, body 1 to form N-type regions 2, 3 and alloying aluminium containing 0À8% boron into the body to form the annular P-type region 4. The deep energy level impurity, preferably Cu, Fe, Ni, Co, Mn or Au, is then diffused in at a low temperature and an alloy junction of gold containing 0À8% antimony is formed to provide the N<SP>+</SP> region 5. |
