| 摘要 |
1,270,215. Semi-conductor devices. SIEMENS A.G. 21 April, 1970 [22 April, 1969], No. 18923/70. Heading H1K. A semi-conductor device has a surface covered with insulation carrying metal layers which each make contact with the semi-conductor through respective holes in the insulation. The metal layers are covered with a further layer of insulation through which an aperture extends to allow contact between a built-up terminal and a metal layer connected to a pn-junctionforming zone in the body, the terminal being designed to serve as a contact when the device is inserted into a housing. The planar diode shown has, in addition to its main electrode 6 and associated terminal 10, an annular fieldrelief electrode 7 and an (optional) heavily doped contact zone therefor. |
