GROUP III{14 V SEMICONDUCTOR TWINNED CRYSTALS AND THEIR PREPARATION BY SOLUTION GROWTH

摘要

The disclosure presents a method of growing large crystals of GaP from solution in which a zone of liquid gallium saturated with GaP is passed upward through a GaP feed ingot. In order to grow large crystals, it was found necessary to initiate growth onto a twinned seed crystal in which all of the twin planes are parallel to each other and parallel to a <211> growth direction. Wafers cut parallel to the twin planes exhibit a (111) surface which are suitable for electroluminescent devices.