| 摘要 |
A semiconductor device which has a semiconductive single crystalline substrate having a plane surface, and an insulating film such as silicon oxide covering said plane surface, in which said plane surface lies parallel to a crystal plane other than a {111} plane, whereby the surface donor density is decreased. The surface donor density is minimized by subjecting said substrate to a heat treatment under application across said film of such a voltage as that which renders the electrode provided on said film negative polarity.
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