| 摘要 |
High antireflection-coating polymers (I) are new. High antireflection-coating polymers (I) of formula -[(CH 2-CH(CO-O-C(CH 3) 3)] a-[CH 2-C(R 1)(CO-OH)] b-[CH 2-C(R 2)(CO-OR 3)] c- are new. R 1, R 2H, F, CH 3or fluoromethyl; R 31-10C hydrocarbon (optionally partially the hydrogens are replaced with F); and a-c : mole bridges of each monomer of 0.05-0.9. Independent claims are also included for: (1) the preparation of (I); (2) a high anti-reflection coating composition comprising (I), photoacid generator and an organic solvent; and (3) a method for forming a sample for semiconductor device comprising providing a photoresist on a semiconductor substrate on which a special, underlying structure is formed, providing the high anti-reflection coating composition to form a high anti-reflection coating and exposing the photoresist, followed by the development of the photoresist to form a photoresist sample. |
