| 摘要 |
PURPOSE:To obtain the T-shaped electrode with excellent reproducibility when forming the electrode on an element region which has been provided on a semiconductor substrate by a method wherein an opening is made on the first resist film, on which the second resist film is provided and an opening having a different size from one already made is bored. CONSTITUTION:On the whole surface of the semiconductor substrate 1, on which the prescribed element region has been formed, the first resist film is formed, a heat treatment is performed and a nonexposed section 6 is produced by performing the first exposure using the first mask pattern. Then, under this state of condition, the second resist film 7 is applied and a nonexposed section 8, which is larger than the nonexposed section 6, is formed on the nonexposed section 6 by performing the same processes. After that, these nonexposed sections 8 and 6 are removed by performing a developement, a reversed-convex shape electrode forming window 9 is opened on the exposed substrate 1, a metallic film 10 for electrode is coated on the whole surface, films 7 and 5 are removed together with the above film 10 and the T-shaped gate electrode 2 is left on the substrate 1 alone. |
