| 摘要 |
PURPOSE:To subject semiconductor wafers to a uniform impurity diffusion, by a method wherein the space inside an open tube is divided by a partition wall having a plurality of holes. CONSTITUTION:A quartz tube 2 is inserted into a furnace core tube 1 and heated as well as supplied with an impurity gas from the left end thereof. From the side closer to a cap 3, a jig 4 constituted by a unitary body of partition walls and wafer holders is inserted into the quartz tube 2. A plurality of holes 4b are formed in the partition wall 4a of the jig 4, while a plurality of semiconductor wafers 5 are mounted in parallel to each other on a wafer holder 4c. An impurity gas introduced into the quartz tube 2 together with a carrier gas generates a turbulent flow every time the gas passes through the holes 4b in the partition wall 4a, to stir the atmosphere inside the quartz tube 2. Thereby, the temperature gradient in the divided space is decreased, and the gas flow is uniformed. Accordingly, the impurities are uniformly diffused into the semiconductor wafers 5. |
