| 摘要 |
PURPOSE:To prevent the destruction of junction according to secular change of a semiconductor device by a method wherein a reversely conductive resistance region from a conductive semiconductor substrate and a conductive region the same conductive type with the resistance region thereof having impurity concentration lower than the resistance region thereof and to surround the resistance region thereof are formed in the conductive semiconductor substrate. CONSTITUTION:The P<+> type region 2 to come in contact with an aluminum wiring layer 3 is formed in the P<-> type region 9 having impurity concentration lower than the region thereof. Accordingly because P-N junction for protection to be formed between the N type substrate 1 is decided by depth of the region 9, even when an alloy layer is formed directly under the wiring layer 3, advance of the alloy layer thereof, namely penetration of aluminum up to reach the substrate 1 is prevented sufficiently. |
