| 摘要 |
PURPOSE:To realize high speed action of a semiconductor integrated circuit device by a method wherein aluminum wiring layers are used both for bit lines and word lines, and transfer transistors and cell plates are formed of polycrystalline silicon films. CONSTITUTION:Active regions 101 and polycrystalline silicon films 102 form transfer gates and cell plates at every other piece. Bit lines 104 are formed of the first aluminum layers, and are connected to the cells through contacts 103. Polycrystalline silicon word lines are connected to the first aluminum layers 105 through the contacts 103, and moreover connected to the word lines 107 formed of the second aluminum wiring layers through through-holes 106. |
