| 摘要 |
PURPOSE:To obtain easily a high quality semiconductor single crystal by forming a grating with different materials of two kinds on a substrate of amorphous material. CONSTITUTION:On the substrate 11 of an amorphous material a grating 12 is formed of two different materials, a material 15 formed by an amorphous or metallic material and the substrate 11. On the grating 12 amorphous or polycrystalline silicon layer 13 is formed by vacuum evaporation or sputter spraying. The layer 13 is covered by a covering layer 14, and the layer is made a single crystal by annealing with a laser or a striped heater. As a result not only periodic potential to silicon atom due to shape but also potential due to difference of substance are applied with the same period. By those potentials the potential required for single crystallization can be emphasized during annealing of the layer 13 and high quality single crystal film by graft epitaxial method is obtained. |
