| 摘要 |
A semiconductor device, including a first region ( 100 ) of semiconductor material of a first conductivity type. The semiconductor device comprises an elongated spatial element ( 111, 112, 113 ) of semiconductor material of a second conductivity type protruding into a first region ( 100 ) of semiconductor material of a first conductivity type; and a bias voltage supply adjusted in operation to fully deplete the spatial element from majority carriers of the second conductivity type. A semiconductor device according to the invention is resistant to smear, has a fill factor equal to one, and due to low total capacitance provides improved sensitivity. |
