发明名称 |
Semiconductor device |
摘要 |
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of ¦Ec3-Ec1¦ APPROX ¦Ev3-Ev5¦, where Ec3 is a resonant energy level of electrons in a conduction band of the third layer and Ev3 is a resonant energy level of holes in a valence band thereof, and Ec1 is an energy level of a conduction band of the first layer and Ev5 is an energy level of a valence band of the fifth layer.
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申请公布号 |
US5031005(A) |
申请公布日期 |
1991.07.09 |
申请号 |
US19870111018 |
申请日期 |
1987.10.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUTATSUGI, TOSHIRO;YOKOYAMA, NAOKI;IMAMURA, KENICHI |
分类号 |
H01L29/08;H01L29/205;H01L29/737;H01L33/00 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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