发明名称 Semiconductor device
摘要 A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of ¦Ec3-Ec1¦ APPROX ¦Ev3-Ev5¦, where Ec3 is a resonant energy level of electrons in a conduction band of the third layer and Ev3 is a resonant energy level of holes in a valence band thereof, and Ec1 is an energy level of a conduction band of the first layer and Ev5 is an energy level of a valence band of the fifth layer.
申请公布号 US5031005(A) 申请公布日期 1991.07.09
申请号 US19870111018 申请日期 1987.10.21
申请人 FUJITSU LIMITED 发明人 FUTATSUGI, TOSHIRO;YOKOYAMA, NAOKI;IMAMURA, KENICHI
分类号 H01L29/08;H01L29/205;H01L29/737;H01L33/00 主分类号 H01L29/08
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