| 摘要 |
<p>A semiconductor memory is fabricated which has a plurality of word lines, bit lines crossing the word lines, and memory cells electrically coupled to the word and bit lines. A groove for a capacitor of the memory cell is formed in a substrate (10), a first conducting film (8) is provided on an inside wall of the groove and on a surface of the substrate (10), an insulating film is disposed on the first conducting film (8), and a second conducting film (82) is formed on the insulating film to fill up the groove, and is edged to form a predetermined pattern. A switching transistor of the memory cell and the bit lines are subsequently provided.</p> |
