PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME

摘要

A liquid precursor containing a metal is applied to a substrate (18), RTP baked, and annealed to form a layered superlattice material (30). To obtain good electrical properties, prebaking the substrate (18) in oxygen in the RTP and anneal are essential, except for high bismuth content precursors. Excess bismuth between 110 % and 140 % of stoichiometry and RTP temperature of 750 .degree.C is optimum. The film is formed in two layers (30A, 30B), the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor.