| 摘要 |
PURPOSE: To make it possible to form reliably a wiring pattern having a highly reliable via stud by a method wherein the wiring pattern is formed in a state that the via stud is completely covered with an etching resist of a shape dimension decided by specified functions. CONSTITUTION: While a via stud 105 is protected with an etching resist 106, a wiring pattern is formed on a conductor layer 102. At that time, the shape dimension of the etching resist 106 covering the stud 105 is decided by functions of the angleαof inclination of the wall surface of the stud 105 at the time of electroplating of a through hole provided in a plated resist 103, an angleβof inclination from a segment dropped vertically from a via stud top end part in the resist 106 covering the stud 105 to the surface of a substrate, the diameter (d) of the bottom of the stud 105, the height (h) of the stud 105 and an alignment error (δ) of a photomask. The wiring pattern is formed in a state that the stud 105 is completely covered with the resist 106. |
