发明名称 |
METHOD FOR FORMING A BIPOLAR TRANSISTOR |
摘要 |
A method for forming a bipolar transistor employs a single drive-in step to form an emitter (16) and a base (14). A layer (30) of spin on glass containing a plurality of dopants is spun onto a collector (12) in a silicon substrate. The dopants are driven into the collector (12) to form the base (14) and emitter (16). The method employs diffusion instead of implanting to form shallow and abrupt junctions without damage to the crystal lattice of the silicon. <IMAGE> |
申请公布号 |
EP0594340(A3) |
申请公布日期 |
1996.04.24 |
申请号 |
EP19930308133 |
申请日期 |
1993.10.12 |
申请人 |
NCR INTERNATIONAL INC. |
发明人 |
ALLMAN, DERRYL DWAYNE JOHN;KWONG, DIM-LEE |
分类号 |
H01L21/225;H01L21/316;H01L21/331;H01L29/73;H01L29/732 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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