| 摘要 |
PURPOSE: To reduce the deterioration possibility of the solar cell characteristics due to the leakage current through pin-holes by adjusting the carrier concn., forbidden band gap and sum of the forbidden band gap and electronic affinity of each of window layers laminated on a photoabsorptive layer such that these parameters of one layer nearer to the photoabsorptive layer are equal to or greater than the next layer. CONSTITUTION: After forming a Mo electrode 2 on a glass substrate 1, a p-Cu(In, Ga)Se2 thin film (photoabsorptive layer) 3 is formed on a specified region, Zn thin film window layers 3-5 are formed thereon with changing the carrier concn., and upper Al electrodes 7 are formed to form a multilayer structure of the window layers whereby the deterioration probability of the solar cell characteristics due to the leakage current can be reduced. Recombination of minority carriers produced due to absorption of the sunshine at the window layers can be reduced in the window layers owing to the internal electric field induced at controlled carrier concn. between the window layers 3-5 and photoabsorptive layer 3, band gap and electronic affinity. |
