| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the diffusion of N into the vicinity of an interface while improving the interface between an Si substrate and a gate insulating film. <P>SOLUTION: The gate insulating film comprising an insulating film at least containing nitrogen is formed on the substrate, and heat treatment of not more than about 500 msec is applied from the upper part of the gate insulating film employing a flush lamp. Thereafter, a gate electrode is formed on the gate insulating film. Upon forming the gate insulating film, the laminated film of SiO<SB>2</SB>film and Si<SB>x</SB>N<SB>(1-x)</SB>film, the laminated film of SiO<SB>2</SB>film, HfO<SB>2</SB>film, and Si<SB>x</SB>N<SB>(1-x)</SB>film or the like, concretely for example, is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
