发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor integrated circuit device which can operate at a high speed, has a fine wiring pattern, and is improved in reliability. In the circuit device, a semiconductor element is provided in a semiconductor substrate (101), and first wiring (103) made mainly of aluminum is provided on the main surface of the substrate (101) as main surface-side local wiring, and then, second wiring (110) made mainly of copper is provided on the first wiring (103) as global wiring. Via wiring (107) which is brought into contact with the first wiring (103) is made of a conductive material other than Cu.
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申请公布号 |
WO9950903(A1) |
申请公布日期 |
1999.10.07 |
申请号 |
WO1998JP01434 |
申请日期 |
1998.03.30 |
申请人 |
HITACHI, LTD.;FUKADA, SHINICHI;AKAHOSHI, HARUO;TAKEDA, KENICHI;FUKUDA, TAKUYA |
发明人 |
FUKADA, SHINICHI;AKAHOSHI, HARUO;TAKEDA, KENICHI;FUKUDA, TAKUYA |
分类号 |
H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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