发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor integrated circuit device which can operate at a high speed, has a fine wiring pattern, and is improved in reliability. In the circuit device, a semiconductor element is provided in a semiconductor substrate (101), and first wiring (103) made mainly of aluminum is provided on the main surface of the substrate (101) as main surface-side local wiring, and then, second wiring (110) made mainly of copper is provided on the first wiring (103) as global wiring. Via wiring (107) which is brought into contact with the first wiring (103) is made of a conductive material other than Cu.
申请公布号 WO9950903(A1) 申请公布日期 1999.10.07
申请号 WO1998JP01434 申请日期 1998.03.30
申请人 HITACHI, LTD.;FUKADA, SHINICHI;AKAHOSHI, HARUO;TAKEDA, KENICHI;FUKUDA, TAKUYA 发明人 FUKADA, SHINICHI;AKAHOSHI, HARUO;TAKEDA, KENICHI;FUKUDA, TAKUYA
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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