| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor substrate that involves a nitride semiconductor used in a light-emitting device such as a light-emitting diode and a laser diode, or a light receiving element such as a solar cell and a photosensor, reduces crystal defects of a substrate especially made of the nitride semiconductor, and has excellent crystallizability. SOLUTION: A partial stripe- or lattice-like protection film is formed on a support substrate, a first nitride conductor is grown in a horizontal direction on the protection film from a support substrate exposure section, the growth is stopped while the protection film is not being covered, and the protection film is removed for forming space at the lower section of the first nitride semiconductor that is grown in the horizontal direction. After that, a second nitride semiconductor is grown from the upper surface of the first nitride semiconductor, or a side that is set to the upper surface and a growth section in a horizontal direction. |
