| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, by which fine interconnection can be formed, the entire device can be planarized even after flip-chip bonding a semiconductor element, and excellent moisture resistance can be obtained. SOLUTION: In the semiconductor device, a plurality of interconnection layers are stacked on a dielectric resin substrate being buried so that bump- shaped metal electrodes arranged at predetermined positions penetrate from the front to the bank, and metal plates are remained on the periphery of semiconductor component mounting portions. |
