发明名称 Devices with optical gain in silicon
摘要 A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
申请公布号 US6858864(B2) 申请公布日期 2005.02.22
申请号 US20040825974 申请日期 2004.04.16
申请人 TRANSLUCENT PHOTONICS, INC. 发明人 ATANACKOVIC PETAR B.;MARSHALL LARRY R.
分类号 G02B6/122;G02B6/125;H01L27/15;H01L33/34;H01S3/06;H01S3/16;H01S5/183;(IPC1-7):H01L31/028 主分类号 G02B6/122
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