发明名称 |
Memory cell and method of making the memory cell |
摘要 |
Methods of making memory devices/cells are disclosed. A memory cell contains first and second electrode layers and a controllably conductive media therebetween. The controllably conductive media contains a copper sulfide-containing passive layer and active layer containing a Cu-doped tantalum oxide and/or titanium oxide layer. Methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed. |
申请公布号 |
US7306988(B1) |
申请公布日期 |
2007.12.11 |
申请号 |
US20050063138 |
申请日期 |
2005.02.22 |
申请人 |
ADVANCED MICRO DEVICES, INC.;SPANSION LLC |
发明人 |
AVANZINO STEVEN C.;YU WEN |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|