| 摘要 |
PROBLEM TO BE SOLVED: To provide a doping method by which efficiency of doping a dopant into a semiconductor melt can be improved, and to provide a doping device. SOLUTION: The doping device 2 is equipped with an outer tube 21 and an inner tube 22 which is arranged inside the outer tube 21 and houses the dopant. A plurality of through-holes 212C are formed at equal intervals along the circumferential direction in the lower end part (a part immersed into the melt) of the side face part 212 of the outer tube 21, and in the side face part 212, a plurality of blades 213 are provided adjacently to the through-holes 212C. When doping is performed, the doping device 2 and a crucible are rotated in the reverse directions. The melt at the outside of the outer tube 21 hits against each blade 213 provided to the outer tube 21 and is introduced to the inside of the outer tube 21 through each through-hole 212C. COPYRIGHT: (C)2008,JPO&INPIT
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