METHODS AND APPARATUS FOR THE VAPORIZATION AND DELIVERY OF SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION
摘要
<p>Improved apparatus and methods for atomic layer deposition (ALD) are described- In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors.</p>
申请公布号
WO2008013665(A3)
申请公布日期
2008.03.20
申请号
WO2007US15596
申请日期
2007.07.06
申请人
THE BOC GROUP, INC.;WANG, QING, MIN;HELLY, PATRICK, J.;MA, CE