METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING FINE CONTACT HOLE

摘要

A method of fabricating a semiconductor device having fine contact holes is provided to obtain openings of a mask pattern, each having uniform size and secure uniform resistance of contact plugs filling contact holes, by forming first and second molding patterns by patterning first and second molding lines. A method of fabricating a semiconductor device having fine contact holes comprises the steps of: forming an isolation layer(121) defining active regions(118a) on a semiconductor substrate(100); forming an interlayer insulating layer(139) on the semiconductor substrate having the isolation layer; forming a plurality of first molding lines(148) on the interlayer insulating layer; forming a plurality of second molding lines(154) which are located between the first molding lines and spaced away from the first molding lines; patterning the first and second molding lines to form first and second molding patterns; forming a mask pattern surrounding sidewalls of the first and second molding patterns; removing the first and second molding patterns to form openings; and etching the interlayer insulating layer using the mask pattern as an etching mask to form contact holes.