| 摘要 |
FIELD: metallurgy, crystals. ^ SUBSTANCE: invention relates to technology of products of polycrystalline diamond, received from the mixture of methane and hydrogen in plasma discharge. It is implemented bottom layer preparation by bite on it of grooves with formation of ground, corresponding configuration of complete product. Grooves are implemented of width, constituting doubled film thickness of complete product and depth, exceeding width. It is grown on bottom layer adamantine film from the mixture of methane and hydrogen in discharge and it is separated from bottom layer in the form of complete product. ^ EFFECT: simplification of receiving of complete products of polycrystalline diamond. |
