| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a SSOI substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. <P>SOLUTION: The method of manufacturing the SSOI substrate includes: providing a substrate; growing SiGe on the surface of the substrate to thereby form a SiGe layer; growing Si with a lattice constant less than a lattice constant of SiGe on the surface of the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and easily configure an apparatus. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
