发明名称 MEMORY SYSTEM AND DRIVING METHOD THEREOF
摘要 A memory system including an ONENAND and NAND flash memory and a driving method thereof are provided to reduce the load of a host processor within a memory system by controlling a plurality of memory devices by using a microcode. A host processor(10) produces a micro code. The micro code is a plurality of instructions controlling a memory within first and second memory devices inside the memory system. A DMA(50) transmits the micro code to a top control sequencer(20) and A channel department B channel control sequencer through the system bus(60). The micro code transmitted by DMA is stored in the sequencer internal memory. The micro code stored in the sequencer internal memory is performed.
申请公布号 KR20090040763(A) 申请公布日期 2009.04.27
申请号 KR20070106258 申请日期 2007.10.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, HO JUN;SONG, JE HYUCK;CHO, SEUNG DUK
分类号 G06F12/00;G06F13/10;G06F13/28 主分类号 G06F12/00
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