发明名称 Semiconductor device and method of manufacturing the same
摘要 In the present semiconductor device, a chip with an LSI circuit is secured to a board 3 (with the chip flipped) so as to be level. The LSI circuit on the chip is specified to operate normally only when the chip is level. Further, the back of the chip is processed so as to give stress to the chip. The chip has a reduced thickness of 50 mum or less (alternatively 30 mum to 50 mum). Therefore, when the chip is detached from the board, it deforms and is no longer level due to the stress, which prohibits the LSI circuit from operating normally. This way, the present semiconductor device ensures that no analysis can be conducted on the LSI circuit once the chip is detached.
申请公布号 US6759722(B2) 申请公布日期 2004.07.06
申请号 US20010820671 申请日期 2001.03.30
申请人 SHARP KABUSHIKI KAISHA;NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 YANAGAWA EIJI;NAKANO AKIHIKO;OHMI TOSHINORI;MATSUMOTO HIRONORI;TAKEDA TADAO;UNNO HIDEYUKI;BAN HIROSHI
分类号 H01L21/02;H01L21/60;H01L21/822;H01L23/00;H01L23/12;H01L23/58;H01L27/04;H01L29/06;(IPC1-7):H01L29/82 主分类号 H01L21/02
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