Memory cells with p-type diffusion read-only port

摘要

A memory cell includes a bistable element and two p-channel transistors (i.e., first and second p-channel transistors). The bistable element includes a plurality of inverting circuits and at least one data storage node. The bistable element may be formed in a first region on the substrate that is partially formed by a p-type diffusion region and an n-type diffusion region. The first and second p-channel transistors are coupled serially. The first p-channel transistor may also have its gate terminal coupled to the at least one data storage node of the bistable element. A method of manufacturing the memory cell includes forming a bistable element having at least first and second data storage nodes, forming a write-only port of the memory cell over an n-type diffusion region and forming a read-only port of the memory cell over a p-type diffusion region.

主权项

1. A memory cell, comprising:
a bistable element that includes a plurality of inverting circuits and that includes at least one data storage node, wherein the plurality of inverting circuits includes pull-up transistors; and first and second p-channel transistors that are coupled in series, wherein the first p-channel transistor has a gate terminal that is coupled to the at least one data storage node of the bistable element, wherein the first and second p-channel transistors have a first threshold voltage, and wherein the pull-up transistors of the bistable element have a second threshold voltage that is different than the first threshold voltage.