发明名称 |
UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME |
摘要 |
This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the first opening;
an infrared sensor configured to detect an infrared wave passing through one of the first opening or the second opening of the through well; and a support arm connecting the sensor to at least one of the plurality of walls so as to suspend the infrared sensor within the through well and adjacent to the first opening. |
申请公布号 |
HK1176745(A1) |
申请公布日期 |
2016.07.29 |
申请号 |
HK20130103818 |
申请日期 |
2013.03.26 |
申请人 |
MIKROSENS ELEKTRONIK SAN. VE TIC. A.S. |
发明人 |
AKIN, Tayfun;EMINOGLU, Selim |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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