Method of fabricating self-aligned silicon carbide semiconductor devices

摘要

Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.