Integrierte Halbleiterschaltungsanordnung mit thermisch gekoppelten Schaltungselementen

摘要

1,021,206. Transistor amplifier circuits. TEXAS INSTRUMENTS Inc. Dec. 31, 1962 [Sept. 7, 1962], No. 49030/62. Heading H3T. [Also in Division H1] An electrical circuit utilizing thermal coupling comprises a plurality of electrically isolated circuit elements in a semi-conductor wafer which are externally coupled together, one of the elements generating heat in response to an electrical signal, the heat being transmitted through the wafer to another circuit element which is heat-responsive. Fig. 1 shows a highgain amplifier on which input signals are applied to the base of transistor 11, the collector of which is coupled through Zener diode 17 to the base of transistor 18. The output is taken from the collector of transistor 18 and a resistor 19 carrying the collector current is thermally coupled to transistor 11 to provide low-frequency or D.C. negative feed-back. Another transistor 21 acts as a reference by being differentially connected with transistor 18 by means of common emitter resistor 18 and transistor 21 is thermally coupled to resistor 22 which takes a steady current. Fig. 2 shows a suitable construction in which a mesa transistor 11 is separated by a thin insulating layer from a silicon resistor bar 19 so that thermal coupling is provided. A similar arrangement may be used for transistor 21 and resistor 22. Alternatively the resistor and transistor may be in the same semi-conductor block and separated by a PN junction. Fig. 3 shows the circuit of a thermal negative feed-back arrangement used to stabilize the temperature of a semi-conductor substrate which may contain a Zener diode. The base 31 of transistor 30 is normally biased slightly below cut-off and the collector 33 is directly connected to the base 41 of transistor 40 so that 40 conducts heavily; this conduction heats the region adjacent the collector 43 which includes transistor 30 which starts to conduct thus reducing the base-emitter bias for transistor 40 and therefore the collector dissipation. The circuit stabilizes where the temperature of the wafer is such that transistor 30 is slightly conducting. The wafer also contains diffused P regions 34, 35 and 38 acting as resistors for the circuit and a separate diode 51 which since the wafer is at a stabilized temperature, provides a constant Zener breakdown voltage.