| 摘要 |
1,228,903. Integrated circuit assemblies. HITACHI Ltd. 17 April, 1968 [19 April, 1967], No. 18189/68. Headings H1K and H1R. An integrated circuit consists of a plane array of isolated semi-conductor elements or element groups, the components of the array being interconnected by tracks on the passivation of the two major faces of the array and by pads constituting connections from one side of the array to the other. The array is supported by an insulating substrate. The organization of the array is shown in Fig. 1. The components (not shown in Fig. 1) are arranged in groups 2 each surrounded by interconnecting pads 7 which are used as terminating points for tracks 10 interconnecting various groups 2 and for tracks 8 leading to the terminals 13 of the array. Tracks 11, 9 with similar purposes are provided on that face of the array in contact with the substrate 1. Arrangement within component groups is shown in Figs. 2 and 3. The interconnecting pads 7 surround the group of diodes 3, transistors 4, and resistors 5. In the embodiment shown isolation between elements is provided by air gaps but in varients the edges of such gaps may be passivated and the space filled with polycrystalline semi-conductor, with metal, or with insulator. The pads 7 are provided with diffused regions 18, 21 to lower their resistance. The tracks between the component groups 2 are supported by semi-conductor islands derived with the components and pads from an initial semi-conductor body from which the array is produced. Semi-conductor material is removed as far as possible, however, from regions in which tracks on the two faces cross one another, to reduce coupling between them. Two methods of making the array are described. These differ principally in that in one formation of the gaps which separate or which will separate the elements from one another is an initial step whereas in the other it is the last step. The substrate may be of glass or ceramic. A ceramic substrate may be formed by depositing powder with a low sintering temperature and then sintering. Passivation may be silicon nitride, alumina, or thermally grown or vapour deposited silicon oxide. |
