| 摘要 |
<P>PROBLEM TO BE SOLVED: To realise a thin-film transistor with high performance and high uniformity by a substrate with an insulating surface, and simultaneously to provide a large-area and low-cost light emitting display device. <P>SOLUTION: In order to expose laser beam LA2 on the substrate surface in a condition where polycrystal silicon film 104 is covered with amorphous silicon film 107, when the amorphous silicon film 107 crystallizes, crystal growth or crystallization accompanying re-crystallization of the polycrystal silicon film 104 depending on exposure condition of laser is improved. When anode forming, emission color of the individual porous silicon film can be freely selected and formed, by controlling the individual thin-film transistor formed on the substrate and controlling porosity of the porous silicon film. Furthermore, forming condition is controlled with good controllability, and high quality light emitting display device is realized with good reproducibility. <P>COPYRIGHT: (C)2003,JPO |
