| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric thin film and a ferroelectric device by which the hysteresis shift can be prevented. SOLUTION: Several dielectric precursor thin films 4-7 are formed on a lower electrode thin film 3 in such a way that the concentration of Ti in the dielectric precursor thin film 4 on the side of a silicon substrate 1 is smaller than that of Ti in the dielectric precursor thin film 7 on the side opposite to the silicon substrate 1. After that, the several dielectric precursor thin films 4-7 are baked for crystallization and a ferroelectric thin film 10 in which the concentration of Ti is almost uniform in the direction of the depth of the silicon substrate 1. |
