| 摘要 |
PURPOSE:To form a small-sized and compact semiconductor device by covering a detector directly on a substrate on which circuit elements are formed. CONSTITUTION:An epitaxially grown layer 7 of Hg1-xCdxTe is formed on a source region 2, and is functioned as a detector. The substrate 7a of the detector 7 is contacted in a nonrectifying manner with the N<+> type source region 2 of an MOST. A P type region 7b is formed on the upper surface of the detector 7, and the detector 7 is operated as a photovoltaic type photoelectric converter. A thin metallic film 8 is a wire contacted in a nonrectifying manner with the P type region 7b of the detector 7, extends onto the upper part of a field oxidized film 5, and is placed on a ZnS film 9 superposed on the film 5. |
