| 摘要 |
PURPOSE:To obtain an RAM which has the access time approximately equal to that of a bipolar RAM and consumes the electric power approximately equal to a CMOS, by using a bipolar Tr to the output stage of a memory cell and an MOSTs to a flip-flop part respectively. CONSTITUTION:The binary information is stored by a flip-flop consisting of p- MOS41 and 42 and n-MOS43 and 44 like a CMOS memory cell. Bipolar Tr45 and 46 performs the interface between a memory cell and digit lines 47 and 48. Then one of word lines 63 is set at a high level by a driver 52 to select one of memory cells 50. While other word lines which are not selected are kept at low levels. While digit lines 62 and 62' are kept at high levels in a non-selection mode. A high level appears to one of selected digit lines 62 and 62' with a low level appearing to the other one. These voltage levels are amplified by an output buffer 54 consisting of a sense circuit 53. |
