| 摘要 |
PURPOSE:To perform high temperature action stably and easily by improving the temperature characteristic, and to improve the reliability by a method wherein electrons are efficiently confined in a new type well and an active layer (diamond type). CONSTITUTION:Indium, gallium, phosphorus and indium, and phosphorus crystals are processed into a multilayer diamond type (active layer) consisting of 11-14 by crystal growth of indium, gallium, and phosphorus crystal seed crystal (diamond type), and are then buried in P-indium, gallium, phosphorus 5, and in N- indium, gallium phosphorus 10 by a tin diffused layer 3. The diamond type active layer consisting of 11-14 and performing laser action is sandwiched from both sides by materials having slightly larger band gap energies consisting of 5, 10, and N-indium phosphorus 9, and then junction potential walls are produced at both interfaces of 5 and 10 in contact with the diamond structure. When current is passed from electrodes 1 and 8, its diffusion is prevented along the potential walls of both the interfaces; accordingly, electrons are effeciently confined in the active layer (diamond type) consisting of numerals 11-14. |
