发明名称 |
PROCESS FOR FORMING MINIATURE CONTACT HOLES IN SEMICONDUCTOR DEVICE WITHOUT SHORT-CIRCUIT |
摘要 |
In order to form a node contact hole in an inter-level insulating structure between bit lines spaced by the minimum length defined in design rules, a preliminary node contact hole is firstly formed in the inter-level insulating structure between the bit lines in such a manner as to have a length greater than the minimum length, and an insulating side wall spacer is formed on the inner surface defining the preliminary node contact hole so as to form the node contact hole having a length less than the minimum length, thereby forming a quite narrow node contact hole without a short-circuit between the bit lines and a storage node electrode.
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申请公布号 |
US2001012688(A1) |
申请公布日期 |
2001.08.09 |
申请号 |
US19980160100 |
申请日期 |
1998.09.25 |
申请人 |
KAWAGUCHI MASAKI;FUJII TAKEO |
发明人 |
KAWAGUCHI MASAKI;FUJII TAKEO |
分类号 |
H01L21/28;H01L21/02;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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