| 发明名称 |
A METHOD FOR PRODUCING A DEVICE HAVING AN INSULATOR SANDWICHED BETWEEN TWO SEMICONDUCTOR LAYERS |
| 摘要 |
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| 申请公布号 |
EP0379208(A3) |
申请公布日期 |
1991.03.13 |
| 申请号 |
EP19900101048 |
申请日期 |
1990.01.19 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
NAGATA, SHUNICHI;MISE, TATSUYA |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;G11C11/34;H01L21/320;H01L21/265 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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