发明名称 Semi-conductor device
摘要 A semiconductor chip package technology which uses thin film wiring from the chip to the package terminals for increased line density and decreased parasitic capacitance and uses a thin film adhesion layer for improved heat conductivity between the package substrate and its sealing cap. The package uses a thin conductor film deposited along the element mounting surface of a sintered substrate. An adhesion layer, to provide a high quality bond between the sealing cap and substrate, is then deposited on the substrate peripheral area by successively laminating metal and metallized layers, or by depositing a single layer of low metal glass. The adhesion layer is thinner and of larger area than thick film technology, for improved heat conduction.
申请公布号 US5018004(A) 申请公布日期 1991.05.21
申请号 US19890442098 申请日期 1989.11.28
申请人 HITACHI, LTD.;HITACHI VLSI ENGINEERING CORP. 发明人 OKINAGA, TAKAYUKI;MATSUGAMI, SHOUJI;SHIRAI, YUUJI;OTSUKA, KANJI;KOGUMA, HIROSHI;EMATA, TAKASHI
分类号 H01L23/34;H01L23/02;H01L23/057;H01L23/08;H01L23/10;H01L23/12 主分类号 H01L23/34
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