VERFAHREN ZUM VERBINDEN VON FORMTEILEN AUS SIC MIT KERAMIK ODER METALL.

摘要

In bonding shaped pts of SiC ceramic with one another or with shaped pts of another ceramic or metal, the surfaces to be bonded are joined by the insertion of a metal layer under diffusion-welding conditions. The novelty consists in using, as metal layer, an Mn-contg. alloy layer of MnCu, contg. 10-90 wt.% Cu as of MnCo, contg. 5-50 wt.% Co, each with the opt. addn of 2-45 wt.% of at least one of Cr, Ti, Zr, Fe, Ni, V and/or Ta, provided that the sum of the additives does not exceed 70 wt.%. Shaped pts of SiSiC are surface-treated preliminarily, to remove free Si from the surface-layers, and sealed. This is achieved by vapour-plating the surface with a metal layer having thickness 3-1000 micron and consisting of at least one of Mn, Cu, Co, Cr, Ti, Zr, Fe, Ni, V and/or Ta or by heating in N2 or in an SiC-forming C-contg. gas, esp a gas contg. CO, or surrounded by C black, in vacuo or in an inert gas, for 10-150 min to 900-1450 deg.C.