发明名称 PRODUCTION OF LEAD TITANATE THIN FILM
摘要 PURPOSE: To produce a lead titanate thin film oriented in C axis, exhibiting excellent piezoelectric characteristics at a low production temperature independent of the kind of the substrate by forming a perovskite-type oxide thin film while sputtering a compound containing lead and titanium to an objective substrate. CONSTITUTION: A high-density oxygen plasma generated by electron cyclotron resonance is applied to a target substrate while sputtering a compound containing lead and titanium to the target substrate by using a target consisting of a lead-containing metal or compound and a titanium-containing metal or compound to obtain the objective thin film consisting of a perovskite-type oxide thin film. The pressure for maintaining the plasma is 1.0×10<-5> to 1.0×10<-2> Torr because the film-forming speed becomes excessively slow for practical use under a pressure of <=1.0×10<-5> Torr and the plasma is not effective under a pressure of >=1×10<-2> Torr.
申请公布号 JPH08259361(A) 申请公布日期 1996.10.08
申请号 JP19960014937 申请日期 1996.01.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII AKIYUKI;TORII HIDEO;AOKI MASAKI
分类号 C04B41/87;B01J19/08;C23C16/40;C23C16/50;C23C16/511;C30B29/32;H01B3/12;(IPC1-7):C04B41/87 主分类号 C04B41/87
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