| 摘要 |
PROBLEM TO BE SOLVED: To perform the self retention of the data of a memory cell whose data are not modified out of memory cells to be erased before page erasure and to execute reprogramming after the page erasure using it. SOLUTION: A non-volatile semiconductor memory is provided for each pair of bit lines in a memory cell array in NAND structure for using two pairs of bit lines, data read from a memory cell for storing data are latched from the memory cells before performing page erasure of the memory cell, and a sense amplifier 39t for providing the latch data to a corresponding bit line is provided at the memory cell for storing data after page erasure. Also, a data inversion circuit 38t for inverting the read data of the memory cell for storing data is disabled when the sense amplifier provides latch data to a bit line corresponding to the memory cell for storing data.
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