| 发明名称 |
INTEGRATED CIRCUIT HAVING A LEVEL OF METALLIZATION OF VARIABLE THICKNESS |
| 摘要 |
An integrated circuit comprising at least one level of metallization, the level of metallization being provided with tracks and comprising metal portions having at least two different thicknesses. The level of metallization comprises at the same time at least one inductor and at least one track, the track being formed on a portion of small thickness, and the inductor being formed on a portion of large thickness. |
| 申请公布号 |
WO9967823(A1) |
申请公布日期 |
1999.12.29 |
| 申请号 |
WO1999IB01129 |
申请日期 |
1999.06.17 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;STMICROELECTRONICS S.A.;LOUWERS, STEPHAN;MARTY, MICHEL |
发明人 |
LOUWERS, STEPHAN;MARTY, MICHEL |
| 分类号 |
H01L21/3213;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L23/532;H01L21/768;H01L21/48;H01L23/528 |
主分类号 |
H01L21/3213 |
| 代理机构 |
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