METHOD FOR FORMING AN OXIDE FILM WITH NON-UNIFORM THICKNESS AT A SILICON SUBSTRATE SURFACE

摘要

The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate surface. The invention is useful for producing oxide films for MOS transistor grids.