VISIBILITY CALCULATING METHOD FOR THREE DIMENSIONAL SEMICONDUCTOR ETCHING PROCESS SIMULATION

摘要

PURPOSE: A visibility calculating method for three dimensional semiconductor etching process simulation is provided to efficiently decrease a time required in a simulation by decreasing the number of calculating repetition of a shadow test when an etching process simulation is performed. CONSTITUTION: Fragments(160,161) of a half sphere is moved on straight lines(140,141)which start from a point(130) on a semiconductor substrate and is performed by a shadow test. The shadow test is performed in points(100,101) in which straight lines(140,141) and an upper surface(180) of a mask are crossed and points(110,111) in which straight lines(140,141) and a lower surface(190) of the mask are crossed. A visibility is calculated by calculating as to whether points(100,101) are included in an inner portion of the upper surface(180) of the mask and points(110,111) are included in an inner portion of the lower surface(190) of the mask.